Sputter Mo thin film on a sample and periodically heat the surface with heating laser. Heat propagates through the Mo thin film and reaches to the sample. A phase lag occurs to the temprature response. The phase lag varies with sample's thermophysical characteristics. Since reflectance of Mo changes according to the temperature, by irradiating and datecting the amplitude variation of a probe laser beam which is coaxial to the heating laser, relative temperature variation of the surface could be measured. By using this method, thermal effusivity measurement in high spatial resolution become possible. Heat capacity per unit volume and thermal conductivity could be calculated by optional software.
| Product | Thermal Microscope TM3B |
|---|---|
| Mode | Thermophisical property distribution measurement (Line, 2D, point) |
| Measurement | Thermal effusivity, (Heat capacity), (Thermal Conductivity) |
| Spot size | About 3 [μm] |
| Time of measurement | 10 seconds per point |
| Thickness | Sub micrometers to μm |
| Repetition accuracy | ±10% for Pyrex and Silicon in thermal effusivity |
| Sample |
1. Holder size 30×30×5 [mm] 2. Sample size less than 30×30×3 [mm]
|
| Operating Temperature | 24℃±1 [℃] (sensor inside the system) |
| XY stage displacement |
・X axis 20 [mm] ・Y axis 20 [mm] ・Z axis 10 [mm] |
| Heating laser | Laser diode 808 [nm] |
| Probe laser | Laser diode 658 [nm] |
| Power Supply | AC 100 [V] 1.5 [kVA] |
| Accessories | Sample holder, Reference samples |
| ※Option | Optional table, Air-conditioning equipments, Booth for air-conditioning, Sputtering eqiopment |
